W39F010
128K
脳
8 CMOS FLASH MEMORY
1. GENERAL DESCRIPTION
The
W39F010
is a 1Mbit, 5-volt only CMOS flash memory organized as 128K
脳
8 bits. For flexible erase
capability, the 1Mbits of data are divided into 32 small even pages with 4 Kbytes. The byte-wide (脳 8)
data appears on DQ7
鈭?/div>
DQ0. The device can be programmed and erased in-system with a standard
5V power supply. A 12-volt V
PP
is not required. The unique cell architecture of the W39F010 results in
fast program/erase operations with extremely low current consumption (compared to other comparable
5-volt flash memory products). The device can also be programmed and erased by using standard
EPROM programmers.
2. FEATURES
鈥?/div>
Single 5-volt operations
鈥?/div>
Flexible 4K-page size can be used as
鈭?/div>
5-volt Read
鈭?/div>
5-volt Erase
鈭?/div>
5-volt Program
鈥?/div>
Fast Program operation:
Parameter Blocks
鈥?/div>
Typical program/erase cycles:
鈭?/div>
1K/10K
鈥?/div>
Twenty-year data retention
鈥?/div>
Low power consumption
鈭?/div>
Byte-by-Byte programming: 50
碌S
(max.)
鈥?/div>
Fast Erase operation:
鈭?/div>
Chip Erase cycle time: 100 mS (max.)
鈭?/div>
Page Erase cycle time: 25 mS (max.)
鈥?/div>
Read access time: 70/90 nS
鈥?/div>
32 even pages with 4K bytes
鈥?/div>
Any individual page can be erased
鈥?/div>
Hardware protection:
鈭?/div>
Active current: 15 mA (typ.)
鈭?/div>
Standby current: 15
碌A(chǔ)
(typ.)
鈥?/div>
End of program detection
鈭?/div>
Software method: Toggle bit/Data polling
鈥?/div>
TTL compatible I/O
鈥?/div>
JEDEC standard byte-wide pinouts
鈥?/div>
Available packages: 32-pin 600 mil DIP,
鈭?/div>
Optional 16K byte Top/Bottom Boot Block
with lockout protection
32-pin PLCC, 32- pin STSOP (8 x 14 mm) and
32- pin TSOP
-1-
Publication Release Date: June 17, 2002
Revision A2
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