鈩?/div>
I
D25
= 340 A
T1
G1
S1
G3
S3
T2
G5
S5
T3
T4
G2
G4
S4
T5
G6
S6
T6
L1
L2
L3
S2
L-
MOSFETs T1 - T6
Symbol
V
DSS
V
GS
I
D25
I
D80
I
D25
I
D80
T
C
= 25擄C
T
C
= 80擄C
T
C
= 25擄C (diode)
T
C
= 80擄C (diode)
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
75
鹵20
340
250
340
250
V
V
A
A
A
A
Applications
AC drives
鈥?in automobiles
- electric power steering
- starter generator
- etc...
鈥?in industrial vehicles
- propulsion drives
- fork lift drives
鈥?in battery supplied equipment
Features
鈥?MOSFETs in trench technology:
- low R
DSon
- optimized intrinsic reverse diode
鈥?package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.3
2
0.25
0.2
450
60
170
60
170
320
200
1.1
90
0.51
1.6
3.3 m鈩?/div>
4
0.02
V
mA
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
V
ns
0.26 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D80
V
DS
= 20 V; I
D
= 2 mA
V
DS
= 75V; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
; I
D
= 175A
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
;
I
D
= 175 A; R
G
= 2.2
鈩?/div>
(diode) I
F
= 175 A; V
GS
= 0 V
(diode) I
F
= 40 A; -di/dt = 200 A/碌s; V
DS
= 30 V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
340
Ratings and characteristic values are per individual MOSFET
IXYS
1
2
