IGBT Module
Sixpack in ECO-PAC 2
VWI 6-12P1
I
C25
V
CES
V
CE(sat) typ.
S9
L9
N5
N9
R5
X 18
W 14
K 12
NTC
J 13
A5
D5
H5
A1
F3
G1
C1
K 10
=6A
= 1200 V
= 3.9 V
Preliminary data
Pin arrangement see outlines
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
T
C
= 25擄C
T
C
= 80擄C
V
GE
= 15/0 V; R
G
= 89
鈩?
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
V
CE
= V
CES
; V
GE
= 15/0 V; R
G
= 89
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵
20
6
4.1
9.6
V
CES
10
40
V
V
A
A
A
碌s
Features
鈥?NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
鈥?FRED diodes
- fast reverse recovery
- low forward voltage
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
W
鈥?AC drives
鈥?power supplies with power factor
correction
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
3.9
4.6
3
0.5
100
30
20
290
90
0.4
0.2
205
11
6.2
4.6
5
0.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
3.1 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 4 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 0.1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
CE
= 960 V;
V
GE
= 0 V; T
VJ
= 25擄C
V
GE
= 0 V; T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 4 A
V
GE
= 15/0 V; R
G
= 89
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 960 V; V
GE
= 15 V; I
C
= 2 A
(per IGBT)
(per IGBT) with heatsink compound
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
www.ixys.net
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
308
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