Advanced Technical Information
IGBT Module
Sixpack in ECO-PAC 2
VWI 15-12P1
I
C25
V
CES
V
CE(sat) typ.
S9
L9
N5
N9
R5
X 18
W 14
A5
D5
H5
A1
F3
G1
C1
K 10
= 18 A
= 1200 V
= 2.3 V
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
T
C
= 25擄C
T
C
= 80擄C
V
GE
= 鹵15 V; R
G
= 82
鈩?
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
V
CE
= 720 V; V
GE
= 鹵15 V; R
G
= 82
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵
20
18
14
20
V
CES
10
90
碌s
V
V
A
A
A
Features
鈥?NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
鈥?FRED diodes
- fast reverse recovery
- low forward voltage
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
W
鈥?AC drives
鈥?power supplies with power factor
correction
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.3
2.7
4.5
0.8
200
50
40
290
60
1.2
1.1
600
45
2.7
2.7
6.5
0.5
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
1.4 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 10 A
V
GE
= 鹵15 V; R
G
= 82
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
(per IGBT)
(per IGBT) with heatsink compound
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
www.ixys.net
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
210
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