.040" NPN Phototransistors
Epoxy Lensed TO-106 Ceramic Package
VTT9102, 9103
PACKAGE DIMENSIONS
inch (mm)
CASE 9 TO-106 (LENSED)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high sensitivity NPN silicon
phototransistor in a recessed TO-106 ceramic package.
The chip is protected with a lens of clear epoxy. The base
connection is brought out allowing conventional transistor
biasing. These devices are spectrally matched to any of
PerkinElmer IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25擄C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-20擄C to 70擄C
-20擄C to 70擄C
100 mW
2.5 mW/擄C
50 mA
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also typical curves, pages 91-92)
Light Current
l
C
mA
Min.
VTT9102
VTT9103
6.0
13.0
Max.
鈥?/div>
鈥?/div>
H
fc (mW/cm
2
)
V
CE
= 5.0 V
100 (5)
100 (5)
Dark Current
l
CEO
H=0
(nA)
Max.
100
100
V
CE
(Volts)
5
5
Collector
Breakdown
V
BR(CEO)
l
C
= 100 碌A(chǔ)
H=0
Volts, Min.
30
30
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 碌A(chǔ)
H=0
Volts, Min.
4.0
4.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.55
0.55
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
鈩?/div>
碌sec, Typ.
6.0
10.0
Typ.
鹵42擄
鹵42擄
Angular
Response
胃
1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
101
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