.025" NPN Phototransistors
Molded Lensed Lateral Package
VTT7122, 7123, 7125
PACKAGE DIMENSIONS
inch (mm)
CASE 7 LATERAL
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a lensed, side looking, transparent plastic,
transfer molded package. These devices are spectrally
and mechanically matched to the VTE717x series of
IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25擄C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40擄C to 85擄C
-40擄C to 85擄C
50 mW
0.91 mW/擄C
25 mA
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also typical curves, pages 91-92)
Light Current
l
C
mA
Min.
VTT7122
VTT7123
VTT7125
1.0
2.0
4.5
Max.
鈥?/div>
鈥?/div>
鈥?/div>
H
fc (mW/cm
2
)
V
CE
= 5.0 V
100 (5)
100 (5)
100 (5)
Dark Current
l
CEO
H=0
(nA)
Max.
100
100
100
V
CE
(Volts)
10
10
10
Collector
Breakdown
V
BR(CEO)
l
C
= 100 碌A(chǔ)
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 碌A(chǔ)
H=0
Volts, Min.
5.0
5.0
5.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.25
0.25
0.25
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
鈩?/div>
碌sec, Typ.
2.0
2.0
2.0
Typ.
鹵36擄
鹵36擄
鹵36擄
Angular
Response
胃
1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
97
1
