.025" NPN Phototransistors
Clear T-1戮 (5 mm) Plastic Package
VTT1225, 26, 27
PACKAGE DIMENSIONS
inch (mm)
CASE 26 T-1戮 (5 mm)
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
a half power acceptance angle (
胃
1/2
) of 5擄. These devices
are spectrally and mechanically matched to the VTE12xx
series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25擄C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40擄C to 100擄C
-40擄C to 100擄C
50 mW
0.71 mW/擄C
25 mA
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also typical curves, pages 91-92)
Light Current
l
C
mA
Min.
VTT1225
VTT1226
VTT1227
4.0
7.5
12.0
Max.
鈥?/div>
鈥?/div>
鈥?/div>
H
fc (mW/cm
2
)
V
CE
= 5.0 V
100 (5)
100 (5)
100 (5)
Dark Current
l
CEO
H=0
(nA)
Max.
100
100
100
V
CE
(Volts)
10
10
10
Collector
Breakdown
V
BR(CEO)
l
C
= 100 碌A(chǔ)
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 碌A(chǔ)
H=0
Volts, Min.
5.0
5.0
5.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.25
0.25
0.25
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
鈩?/div>
碌sec, Typ.
1.5
3.0
4.0
Angular
Response
胃
1/2
Part Number
Typ.
鹵5擄
鹵5擄
鹵5擄
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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