.025" NPN Phototransistors
Clear T-1戮 (5 mm) Plastic Package
VTT1222W, 23W
PACKAGE DIMENSIONS
inch (mm)
CASE 26W T-1戮 (5 mm) WIDE ANGLE
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
a half power acceptance angle (胃
1/2
) of 40擄. These
devices are spectrally and mechanically matched to the
VTE12xxW series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25擄C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40擄C to 100擄C
-40擄C to 100擄C
50 mW
0.71 mW/擄C
25 mA
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also typical curves, pages 91-92)
Light Current
l
C
mA
Min.
VTT1222W
VTT1223W
0.9
1.5
Max.
鈥?/div>
鈥?/div>
H
fc (mW/cm
2
)
V
CE
= 5.0 V
100 (5)
100 (5)
Dark Current
l
CEO
H=0
(nA)
Max.
10
10
V
CE
(Volts)
20
20
Collector
Breakdown
V
BR(CEO)
l
C
= 100 碌A(chǔ)
H= 0
Volts, Min.
50
40
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 碌A(chǔ)
H=0
Volts, Min.
6.0
6.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.25
0.25
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
鈩?/div>
碌sec, Typ.
2.0
3.0
Angular
Response
胃
1/2
Part Number
Typ.
鹵40擄
鹵40擄
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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