.050" NPN Phototransistors
TO-46 Lensed Package
VTT1115, 16, 17
PACKAGE DIMENSIONS
inch (mm)
CASE 3
TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25擄C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40擄C to 110擄C
-40擄C to 110擄C
250 mW
3.12 mW/擄C
200 mA
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also typical curves, pages 91-92)
Light Current
l
C
mA
Min.
VTT1115
VTT1116
VTT1117
1.0
2.0
4.0
Max.
鈥?/div>
鈥?/div>
鈥?/div>
H
fc (mW/cm
2
)
V
CE
= 5.0 V
20 (1)
20 (1)
20 (1)
Dark Current
l
CEO
H=0
(nA)
Max.
100
100
100
V
CE
(Volts)
10
10
10
Collector
Breakdown
V
BR(CEO)
l
C
= 100 碌A
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
V
BR(ECO)
l
E
= 100 碌A
H=0
Volts, Min.
6.0
4.0
4.0
Saturation
Voltage
V
CE(SAT)
l
C
= 1.0 mA
H = 400 fc
Volts, Max.
0.40
0.40
0.40
Rise/Fall Time
t
R
/t
F
l
C
= 1.0 mA
R
L
= 100
鈩?/div>
碌sec, Typ.
5.0
8.0
8.0
Typ.
鹵15擄
鹵15擄
鹵15擄
Angular
Response
胃
1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
103
1
