VTP Process Photodiodes
VTP8651
PACKAGE DIMENSIONS
inch (mm)
CASE 22 MINI-DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic,
infrared transmitting package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning devices side by side. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40擄C to 85擄C
-40擄C to 85擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTP curves, page 46)
VTP8651
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
33
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
725
925
140
鹵50
2.0 x 10
-13
UNITS
Typ.
55
.24
300
-2.0
30
.15
50
.045
.50
1150
Max.
碌A(chǔ)
%/擄C
mV
mV/擄C
nA
G鈩?/div>
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
(Typ.)
W
鈦?/div>
Hz
cm Hz / W
35
1.4 x 10
12
(Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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