VTP Process Photodiodes
VTP7840
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transfer molded,
large lensed sidelooker package. The dark
package material filters out visible light but
passes infrared. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
CASE 51 LENSED SIDELOOKER
CHIP ACTIVE AREA: .0082 in
2
(5.27 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40擄C to 85擄C
-40擄C to 85擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTP curves, page 46)
VTP7840
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Forward Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
@ 10 mA
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
@ Peak
725
925
1.0
鹵48
5.3 x 10
-14
UNITS
Typ.
70
.20
325
-2.0
20
0.25
40
.55
1150
nA
G鈩?/div>
pF
A/W
nm
nm
V
Degrees
(Typ.)
W
鈦?/div>
Hz
cm Hz / W
Max.
碌A(chǔ)
%/擄C
mV
50
5.1 x 10
12
(Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
60
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