VTP Process Photodiodes
VTP3310LA
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a clear,
long T-1, endlooking package. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
CASE 50A LONG T-1
CHIP ACTIVE AREA: .0011 in
2
(0.684 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40擄C to 100擄C
-40擄C to 100擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTP curves, page 46)
VTP3310LA
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
30
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
400
925
140
鹵20
1.9 x 10
-13
(Typ.)
11
UNITS
Typ.
36
.20
350
-2.0
35
10
25
.015
.55
1150
Max.
碌A(chǔ)
%/擄C
mV
mV/擄C
nA
G鈩?/div>
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
(Typ.)
24
5.3 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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