VTP Process Photodiodes
VTP1232
PACKAGE DIMENSIONS
inch (mm)
(Also available in infrared transmitting visible
blocking version)
CASE 26 T-1戮
CHIP ACTIVE AREA: .0036 in
2
(2.326 mm
2
)
PRODUCT DESCRIPTION
This photodiode features the largest detection
area available in a clear, endlooking T-1戮
package. Combined with excellent dark current,
it can fulfill the demands of many difficult
applications.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40擄C to 100擄C
-40擄C to 100擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTP curves, page 46)
VTP1232
SYMBOL
I
SC
TC I
SC
Re
V
OC
TC V
OC
I
D
C
J
位
range
位
p
S
R
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Responsivity
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
@ Peak
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
880 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 0 V
400
920
0.60
.18
0.06
.42
-2.0
25
.30
1100
100
0.20
0.076
Typ.
Max.
碌A(chǔ)
%/擄C
A/(W/cm
2
)
mV
mV/擄C
nA
nF
nm
nm
A/W
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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