VTP Process Photodiodes
VTP1188S
PACKAGE DIMENSIONS
inch (mm)
CASE 12 LENSED CERAMIC
CHIP ACTIVE AREA: .017 in
2
(1.1 mm
2
)
ABSOLUTE MAXIMUM RATINGS
PRODUCT DESCRIPTION
Large area planar silicon photodiode mounted
on a two lead ceramic substrate. A clear molded
lens is used to increase sensitivity. Low junction
capacitance permits fast response time.
Storage Temperature:
Operating Temperature:
-20擄C to 75擄C
-20擄C to 75擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTP curves, page 46)
VTP11188S
SYMBOL
I
SC
TC I
SC
I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
位
range
位
p
S
R
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Short Circuit Current
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
@ Peak
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
100 碌W/cm
2
, 880 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 mV
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V =0 V
400
925
.55
13
.33
-2.0
3
67
-11
.18
.30
1100
30
Typ.
200
.20
25
Max.
碌A(chǔ)
%/擄C
碌A(chǔ)
mV
mV/擄C
nA
G鈩?/div>
%/擄C
nF
nm
nm
A/W
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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