VTP Process Photodiodes
VTP100
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
sidelooker package. The package material is
infrared transmitting (blocking visible light).
These diodes exhibit low dark current and fast
speed of response.
CASE 52 FLAT SIDELOOKER
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40擄C to 100擄C
-40擄C to 100擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTP curves, page 46)
VTP100
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
30
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
725
925
140
鹵70
2.5 x 10
-14
(Typ.)
13
UNITS
Typ.
55
.24
300
-2.0
30
.25
50
.036
.047
.50
1150
Max.
碌A
%/擄C
mV
mV/擄C
nA
G鈩?/div>
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
(Typ.)
35
1.1 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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