GaAlAs Infrared Emitting Diodes
T-1戮 (5 mm) Bullet Package 鈥?880 nm
VTE1285
PACKAGE DIMENSIONS
inch (mm)
DESCRIPTION
CASE 62 T-1戮 (5 mm) BULLET
CHIP SIZE: .015" x .015"
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of 鹵8擄.
ABSOLUTE MAXIMUM RATINGS @ 25擄C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Continuous Current:
Derate above 30擄C:
Peak Forward Current, 10 碌s, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40擄C to 100擄C
200 mW
2.86 mW/擄C
100 mA
1.43 mA/擄C
2.5 A
-.8%/擄C
Maximum Reverse Voltage:
Maximum Reverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise: 1.0 碌s Fall: 1.0 碌s
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 碌A(chǔ)
880 nm
23 pF
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also GaAlAs curves, pages 108-110)
Output
Irradiance
Part Number
E
e
mW/cm
2
Min.
VTE1285
3.0
Typ.
5.5
Condition
distance
mm
36
Diameter
mm
6.4
Radiant
Intensity
I
e
mW/sr
Min.
39
Total Power
P
O
mW
Typ.
20
Test
Current
I
FT
mA
(Pulsed)
100
Forward Drop
V
F
@ I
FT
Volts
Typ.
Typ.
1.5
Max.
2.0
鹵8擄
Half Power Beam
Angle
胃
1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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