GaAs Infrared Emitting Diodes
TO-46 Flat Window Package 鈥?940 nm
VTE1013
PACKAGE DIMENSIONS
inch (mm)
DESCRIPTION
CASE 24A TO-46 HERMETIC (Flat Window)
CHIP SIZE: .018" X .018"
This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher
current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25擄C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30擄C:
Maximum Continuous Current:
Derate above 30擄C:
Peak Forward Current, 10 碌s, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-55擄C to 125擄C
200 mW
2.11 mW/擄C
100 mA
1.05 mA/擄C
3.0 A
-.8%/擄C
Maximum Reverse Voltage:
Maximum Reverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise:1.0 碌s Fall: 1.0 碌s
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.
5.0V
10 碌A(chǔ)
940 nm
35 pF
260擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also GaAlAs curves, pages 123-124)
Output
Irradiance
Part Number
E
e
mW/cm
2
Min.
VTE1013
2.1
Typ.
2.7
Condition
distance
mm
36
Diameter
mm
6.4
Radiant
Intensity
I
e
mW/sr
Min.
27
Total Power
P
O
mW
Typ.
30
Test
Current
I
FT
mA
(Pulsed)
1.0
Forward Drop
V
F
@ I
FT
Volts
Typ.
Typ.
1.9
Max.
2.5
鹵35擄
Half Power Beam
Angle
胃
1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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