Alternate Source/
Second Source Photodiodes
VTD34
(BPW34 INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS
inch (mm)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded
plastic package. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. These photodiodes are
designed to provide excellent sensitivity at low levels
of irradiance.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20擄C to 80擄C
-20擄C to 80擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
VTD34
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
C
J
t
R
/t
F
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Junction Capacitance
Rise/Fall Time @ 1 k鈩?Lead
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp.-50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
40
鹵50
4.8 x 10
-14
TEST CONDITIONS
Min.
1000 Lux, 2850 K
2850 K
H = 1000 Lux, 2850 K
2850 K
H = 0, V
R
= 10 V
@ 1 MHz, V
R
= 0 V
VR = 10 V, 833 nm
@ Peak
400
900
300
50
Typ.
70
.20
365
-2.0
2
60
50
0.60
1100
30
Max.
UNITS
碌A(chǔ)
%/擄C
mV
mV/擄C
nA
pF
nsec
A/W
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
5.7 x 10
12
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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