Alternate Source/
Second Source Photodiodes
VTD34F
(BPW34F INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
package. The package material filters out visible light
but passes infrared. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. The photodiodes are designed
to provide excellent sensitivity at low levels of
irradiance.
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20擄C to 80擄C
-20擄C to 80擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
VTD34F
SYMBOL
Re
V
OC
TC V
OC
I
D
C
J
t
R
/t
F
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Responsivity
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Junction Capacitance
Rise/Fall Time @ 1 k鈩?Lead
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp.-50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
40
鹵50
4.8 x 10
-14
5.7 x 10
12
TEST CONDITIONS
Min.
0.5 mW/cm
2
, 940 nm
0.5 mW/cm
2
, 940 nm
2850 K
H = 0, V
R
= 10 V
@ 1 MHz, V
R
= 0 V
V
R
= 10 V, 833 nm
@ Peak
725
940
15
275
350
-2.0
2
60
50
0.60
1150
30
Typ.
Max.
碌A(chǔ)
mV
mV/擄C
nA
pF
nsec
A/W
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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