VTB Process Photodiodes
VTB8440, 8441
PACKAGE DIMENSIONS
inch (mm)
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic
package. Chip is coated with a protective layer
of epoxy. These diodes have very high shunt
resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20擄C to 75擄C
-20擄C to 75擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTB curves, pages 21-22)
VTB8440
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
2
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
320
920
40
鹵50
5.9 x 10
-14
VTB8441
UNITS
Max.
.23
Min.
35
Typ.
45
.12
490
-2.0
2000
100
1.4
-8.0
1.0
.10
1100
320
920
2
40
鹵50
1.3 x 10
-14
(Typ.)
1.7 x 10
13
Typ.
45
.12
490
-2.0
.07
-8.0
1.0
.10
Max.
碌A(chǔ)
.23
%/擄C
mV
mV/擄C
pA
G鈩?/div>
%/擄C
nF
A/W
1100
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
(Typ.)
35
(Typ.)
3.9 x 10
12
(Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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