VTB Process Photodiodes
VTB5051UVJ
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a three lead TO-5
package with a UV transmitting 鈥渇lat鈥?window.
Chip is isolated from the case. The third lead
allows case to be grounded. These diodes have
very high shunt resistance and have good blue
response.
CASE 14A TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40擄C to 110擄C
-40擄C to 110擄C
ELECTRO-OPTICAL CHARACTERISTICS @ 25擄C
(See also VTB curves, pages 21-22)
VTB5051UVJ
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
S
R
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Sensitivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
2
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = -10 mV
H = 0, V = -10 mV
H = 0, V = 0
365 nm
220 nm
.038
200
920
40
鹵50
2.1 x 10
-14
(Typ.)
13
(Typ.)
UNITS
Typ.
130
.12
490
-2.0
250
.56
-8.0
3.0
0.1
1100
.23
Max.
碌A(chǔ)
%/擄C
mV
mV/擄C
pA
G鈩?/div>
%/擄C
nF
A/W
A/W
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
85
1.8 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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