VR4J Datasheet

IC型號：
VR4J
PDF描述：
TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed...
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芯片廠家：
TOSHIBA

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TVR4J,TVR4N

TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR4J,TVR4N

High Speed Rectifier Applications (fast recovery)

Unit: mm

Repetitive Peak Reverse Voltage: V

RRM

= 600, 1000 V

Average Forward Current: I

F (AV)

= 1.2 A (Ta = 55擄C)

Reverse Recovery Time: t

= 20 碌s

Plastic Mold Type.

路

Maximum Ratings

(Ta

25擄C)

Characteristics

Repetitive peak

reverse voltage

TVR4J

TVR4N

Symbol

RRM

F (AV)

FSM

stg

Rating

600

1000

1.2

100 (50 Hz)

-40

to 150

-40

to 150

Unit

擄C

Average forward current (Ta

55擄C )

Peak one cycle surge forward current

(non repetitive)

Junction temperature

Storage temperature range

JEDEC

JEITA

TOSHIBA

鈥?/div>

3-4B1A

Electrical Characteristics

(Ta

25擄C)

Characteristics

Peak forward voltage

Repetitive peak reverse current

Reverse recovery time

Thermal resistance (junction to ambient)

Symbol

RRM

th (j-a)

5 A

RRM

Rated

20 mA, I

1 mA

Test Condition

Weight: 0.47 g (typ.)

Min

戮

Typ.

戮

Max

1.2

Unit

擄C/W

Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.

Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.

Marking

Type Code Lot No.

Code

Month (starting from alphabet A)

Year (last number of the christian era)

Cathode Mark

Color: Silver

VR4J

VR4N

Type

TVR4J

TVR4N

2002-09-18

型號

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描述

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VR4J

英文版

TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed...

TOSHIBA

VR4J
VR4J

英文版

TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed...

TOSHIBA [T...

VR4J

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