VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN0808L
VN0808LS
VQ1006P
80
90
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 2
0.8 to
2
0.8 to 2.5
I
D
(A)
0.3
0.33
0.4
FEATURES
D
D
D
D
D
Low On-Resistance: 3.6
W
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
TO-226AA
(TO-92)
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
TO-92S
S
1
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
Dual-In-Line
D
1
N
S
1
G
1
NC
D
4
S
4
G
4
NC
G
3
S
3
D
3
N
N
1
2
3
4
5
6
7
14
13
12
11
10
9
8
S
1
G
2
G
2
D
3
N
D
3
Top View
Top View
VN0808L
VN0808LS
G
2
S
2
D
2
Front View:
VN0808LS
鈥淪鈥?VN
0808LS
xxyy
鈥淪鈥?= Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
Top View
Sidebraze: VQ1006P
Front View:
VN0808L
鈥淪鈥?VN
0808L
xxyy
Top View:
VQ1006P
VQ1006P
鈥淪鈥漟//xxyy
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
VQ1006P
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70214
S-04279鈥擱ev.D, 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
VN0808L
80
"30
0.3
0.19
1.9
0.8
0.32
156
VN0808LS
80
"30
0.33
0.21
1.9
0.9
0.4
139
Single
90
"20
0.4
0.23
2
1.3
0.52
96
Total Quad
Unit
V
A
2
0.8
62.5
W
_C/W
_C
鈥?5 to 150
11-1
1
2
3
4
