2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
2N6660
VQ1004J/P
V
(BR)DSS
Min (V)
60
r
DS(on)
Max (W)
3 @ V
GS
= 10 V
3.5 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 2
0.8 to 2.5
I
D
(A)
1.1
0.46
FEATURES
D
D
D
D
D
Low On-Resistance: 1.3
W
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
Dual-In-Line
TO-205AD
(TO-39)
N
S
1
2N6660
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2
G
3
D
鈥淪鈥?= Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
N
Device Marking
Side View
D
1
S
1
G
1
NC
G
2
S
2
D
2
D
4
S
4
G
4
NC
G
3
S
3
D
3
N
N
Device Marking
Top View
VQ1004J
鈥淪鈥?/div>
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1
2
3
4
5
6
7
14
13
12
11
10
9
8
VQ1004P
鈥淪鈥?/div>
fllxxyy
鈥淪鈥?= Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
Top View
2N6660
Top View
Plastic: VQ1004J
Sidebraze: VQ1004P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain
Current
a
T
C
= 25_C
T
C
= 100_C
T
C
= 25_C
T
C
= 100_C
Total Quad
VQ1004J/P
Unit
V
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
, T
stg
2N6660
60
"20
1.1
0.8
3
6.25
2.5
170
20
VQ1004J
60
"30
0.46
0.26
2
1.3
0.52
0.96
VQ1004P
60
"20
"0.46
0.26
2
1.3
0.52
0.96
A
2
0.8
62.5
W
_C/W
_
_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
b
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
鈥?5 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.
Document Number: 70222
S-04379鈥擱ev. E, 16-Jul-01
www.vishay.com
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