VP0808B/L/M, VP1008B/L/M
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
鈥?00
鈥?0
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
5 @ V
GS
= 鈥?0 V
5 @ V
GS
= 鈥?0 V
5 @ V
GS
= 鈥?0 V
5 @ V
GS
= 鈥?0 V
5 @ V
GS
= 鈥?0 V
5 @ V
GS
= 鈥?0 V
V
GS(th)
(V)
鈥? to 鈥?.5
鈥? to 鈥?.5
鈥? to 鈥?.5
鈥? to 鈥?.5
鈥? to 鈥?.5
鈥? to 鈥?.5
I
D
(A)
鈥?.88
鈥?.28
鈥?.31
鈥?.79
鈥?.28
鈥?.31
Features
D
D
D
D
D
High-Side Switching
Low On-Resistance: 2.5
W
Moderate Threshold: 鈥?.4 V
Fast Switching Speed: 40 ns
Low Input Capacitance: 75 pF
TO-205AD (TO-39)
(Case Drain)
S
1
Benefits
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
TO-226AA
(TO-92)
Applications
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
TO-237
(Tab Drain)
S
1
S
1
G
VP0808B
VP1008B
D
Top View
2
VP0808L
VP1008L
3
G
2
VP0808M
VP1008M
3
2
G
3
D
D
Top View
Top View
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
T
A
=
25_C
T
A
=
100_C
T
A
=
25_C
T
A
=
100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
, T
stg
VP0808B
b
鈥?0
"20
鈥?.88
鈥?.53
鈥?
6.25
2.5
20
VP0808L
鈥?0
"30
鈥?.28
鈥?.17
鈥?
0.8
0.32
156
VP0808M
鈥?0
"30
鈥?.31
鈥?.20
鈥?
1
0.4
125
VP1008B
b
鈥?00
"20
鈥?.79
鈥?.53
鈥?
6.25
2.5
20
VP1008L
鈥?00
"30
鈥?.28
鈥?.17
鈥?
0.8
0.32
156
VP1008M
鈥?00
"30
鈥?.31
鈥?.20
鈥?
1
0.4
125
Unit
V
A
W
_C/W
_C
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Operating Junction and
Storage Temperature Range
鈥?5 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218.
Siliconix
P-37655鈥擱ev. B, 25-Jul-94
1
1
2
3
4
