VP1008CSM4
MECHANICAL DATA
Dimensions in mm (inches)
P鈥揅HANNEL
ENHANCEMENT MODE
MOSFET
1.40 鹵 0.15
(0.055 鹵 0.006)
0.25 鹵 0.03
(0.01 鹵 0.001)
5.59 鹵 0.13
(0.22 鹵 0.005)
FEATURES
鈥?B
VDSS
=100V
鈥?I
D
= 300mA
0.23 min.
(0.009)
0.64 鹵 0.08
(0.025 鹵 0.003)
0.23 rad.
(0.009)
3
2
1.27 鹵 0.05
(0.05 鹵 0.002)
3.81 鹵 0.13
(0.15 鹵 0.005)
4
1
鈥?Hermetic Surface Mount Package
鈥?Screening Option Available
1.02 鹵 0.20
(0.04 鹵 0.008)
2.03 鹵 0.20
(0.08 鹵 0.008)
LCC3 PACKAGE
Underside View
PAD 1 - Drain
PAD 2 - N/C
PAD 3 - Source
PAD 4 - Gate
The VP1008CSM4 is a general purpose
P-Channel enhancement mode mosfet in
a Ceramic Surface Mount package
designed for high rel applications:
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
T
STG
, T
J
NOTE:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
Drain 鈥?Source Voltage
Gate 鈥?Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Power Dissipation
@T
A
= 25擄C
@T
A
= 100擄C
Maximum Junction and Storage Temperature Range
@T
A
= 25擄C
@T
A
= 100擄C
100V
"30V
300mA
195mA
3A
400W
160W
150擄C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/99
1
2
