VP0300L/LS, VQ2001J/P
Vishay Siliconix
P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VP0300L
VP0300LS
VQ2001J
VQ2001P
鈥?0
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
2.5 @ V
GS
= 鈥?2 V
2.5 @ V
GS
= 鈥?2 V
2 @ V
GS
= 鈥?2 V
2 @ V
GS
= 鈥?2 V
V
GS(th)
(V)
鈥? to 鈥?.5
鈥? to 鈥?.5
鈥? to 鈥?.5
鈥? to 鈥?.5
I
D
(A)
鈥?.32
鈥?.5
鈥?.6
鈥?.6
FEATURES
D
D
D
D
D
High-Side Switching
Low On-Resistance: 1.5
W
Moderate Threshold: 鈥?.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF
TO-226AA
(TO-92)
1
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
Dual-In-Line
D
1
P
S
1
G
1
1
2
3
4
5
6
7
14 D
4
13 S
4
12 G
4
11 NC
10 G
3
9
8
Top View
Plastic: VQ2001J
Sidebraze: VQ2001P
S
3
D
3
P
P
TO-92S
(Copper Lead Frame)
S
1
S
G
2
G
2
NC
G
2
D
3
D
3
P
S
2
D
2
Top View
VP0300L
Top View
VP0300LS
For device marking, see the last page of this data sheet.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
VQ2001J/P
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
VP0300L
鈥?0
"20
鈥?.32
鈥?.2
鈥?.4
0.8
0.32
156
VP0300LS
鈥?0
"20
鈥?.5
鈥?.32
鈥?
0.9
0.4
139
鈥?5 to 150
Single
鈥?0
"20
鈥?.6
鈥?.37
鈥?
1.3
0.52
96
Total Quad
鈥?0
"20
鈥?.6
鈥?.37
鈥?
2
0.8
62.5
Unit
V
A
W
_C/W
_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70217
S-04279鈥擱ev. E, 16-Jul-01
www.vishay.com
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