廬
VNQ690SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ690SP
(*) Per each channel
s
R
DS(on)
90m鈩?(*)
I
OUT
10 A
V
CC
36 V
OUTPUT CURRENT PER CHANNEL: 10A
s
CMOS COMPATIBLE INPUTS
s
OPEN LOAD DETECTION (OFF STATE)
s
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT- DOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUT-DOWN
s
CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
PROTECTION AGAINST:
n
LOSS OF GROUND & LOSS OF V
CC
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ690SP is a monolithic device made by
using|
STMicroelectronics
VIPower
M0-3
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
-V
CC
I
OUT
I
R
I
IN
I
STAT
I
GND
Parameter
10
1
PowerSO-10鈩?/div>
ORDER CODES
PACKAGE
PowerSO-10
TUBE
VNQ690SP
T&R
VNQ690SP13TR
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Status current
Ground current at T
C
<25擄C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5K鈩? C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Power dissipation at T
C
=25擄C
Maximum Switching Energy
(L=0.38mH; R
L
=0鈩? V
bat
=13.5V; T
jstart
=150潞C; I
L
=14A)
Junction operating temperature
Storage temperature
Value
41
-0.3
Internally limited
-15
+/- 10
+/- 10
-200
4000
4000
5000
5000
78
53
-40 to 150
-65 to 150
Unit
V
V
A
A
mA
mA
mA
V
V
V
V
W
mJ
擄C
擄C
V
ESD
P
tot
E
MAX
T
j
T
stg
(**) See application schematic at page 8
April 2003
1/18
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