35m鈩?/div>
I
lim
25A
V
CC
36 V
DC SHORT CIRCUIT CURRENT: 25A
s
CMOS COMPATIBLE INPUTS
s
PROPORTIONAL LOAD CURRENT SENSE
s
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT-DOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUT-DOWN
s
CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
PROTECTION AGAINST:
n
LOSS OF GROUND & LOSS OF V
CC
s
REVERSE BATTERY PROTECTION (**)
s
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
SO-28
TUBE
VNQ600AP
T&R
VNQ600AP13TR
DESCRIPTION
The VNQ600AP is a quad HSD formed by
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
-V
CC
I
OUT
I
R
I
IN
V
CSENSE
I
GND
Parameter
assembling two VND600 chips in the same SO-28
package. The VND600 is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology. The VNQ600A is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
Current sense maximum voltage
Ground current at T
pins
< 25擄C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5K鈩? C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
Maximum Switching Energy
(L=0.11mH; R
L
=0鈩? V
bat
=13.5V; T
jstart
=150潞C; I
L
=40A)
Power dissipation (per island) at T
lead
=25擄C
Junction operating temperature
Storage temperature
Value
41
-0.3
15
-15
+/- 10
-3
+15
-200
4000
2000
5000
5000
126
6.25
Internally Limited
-55 to 150
Unit
V
V
A
A
mA
V
V
mA
V
V
V
V
mJ
W
擄C
擄C
V
ESD
E
MAX
P
tot
T
j
T
stg
(**) See application schematic at page 9.
October 2003 - Revision 1.3 (Working document)
1/18
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.