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VNN1NV04 Datasheet

  • VNN1NV04

  • “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

  • 394.22KB

  • 18頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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VND1NV04
/
VNN1NV04 / VNS1NV04
鈥淥MNIFET II鈥?
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VND1NV04
VNN1NV04
VNS1NV04
R
DS(on)
250 m鈩?/div>
I
lim
1.7 A
V
clamp
2
40 V
1
2
3
n
LINEAR CURRENT LIMITATION
n
THERMAL SHUT DOWN
n
SHORT CIRCUIT PROTECTION
n
INTEGRATED CLAMP
n
LOW CURRENT DRAWN FROM INPUT PIN
n
DIAGNOSTIC FEEDBACK THROUGH INPUT
SOT-223
SO-8
3
1
TO-252 (DPAK)
PIN
n
ESD PROTECTION
n
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n
COMPATIBLE WITH STANDARD POWER
MOSFET
ORDER CODES:
TO-252 (DPAK)
SOT-223
SO-8
VND1NV04
VNN1NV04
VNS1NV04
DESCRIPTION
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic
devices
designed
in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
DRAIN
2
Overvoltage
Clamp
INPUT
1
Gate
Control
Over
Temperature
Linear
Current
Limiter
3
SOURCE
FC01000
February 2003
1/18

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