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VNB10N07 Datasheet

  • VNB10N07

  • ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET

  • 14頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
鈥漁MNIFET鈥?
FULLY AUTOPROTECTED POWER MOSFET
T YPE
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
s
s
s
s
s
s
V
c lamp
70
70
70
70
V
V
V
V
R
DS(on)
0.1
0.1
0.1
0.1
鈩?/div>
鈩?/div>
鈩?/div>
鈩?/div>
I
l im
10
10
10
10
A
A
A
A
3
1
s
s
s
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
D2PAK
TO-263
SOT82-FM
3
1
2
10
1
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using
STMicroelectronics
VIPower
M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
BLOCK DIAGRAM (鈭?
ISOWATT220
PowerSO-10
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
(鈭? PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
1/14

VNB10N07 產(chǎn)品屬性

  • VNB10N07 View All Specifications

  • 50

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān)

  • OMNIFET™

  • 低端

  • 非反相

  • 1

  • 100 毫歐

  • -

  • 10A

  • -

  • -

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 管件

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