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VN771 Datasheet

  • VN771

  • QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CON...

  • 88.86KB

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
VN771
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H-BRIDGE CONFIGURATIONS
T YPE
VN771
R
DS( on)
*
0.140
鈩?/div>
I
OUT
14 A
V
CC
26 V
* Total resistance of one side in bridge configuration
s
s
s
s
s
s
s
IDEAL AS A LOW VOLTAGE BRIDGE
VERY LOW STAND-BY POWER
DISSIPATION
OVER-CURRENT PROTECTED
STATUS FLAG DIAGNOSTICS ON UPPER
SIDE
OPEN DRAIN DIAGNOSTICS OUTPUT
UNDER-VOLTAGE PROTECTION
SUITABLE AS QUAD SWITCH
SO-28
DESCRIPTION
The VN771 is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two Power
MOSFETs. The double high side are made using
STMicroelectronics VIPower technology; Power
MOSFETs are made by using the new advanced
strip lay-out technology This device is suitable to
drive a DC motor in a bridge configuration as well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to V
CC
.
DUAL HIGH-SIDE SWITCH
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (
tpol
) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
October 1998
MOS off at a minimum junction temperature of
140
o
C. When this temperature returns to 125
o
C
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
demag
)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
P
dem
= 0.5
鈥?/div>
L
load
鈥?/div>
(I
load
)
2
鈥?/div>
[(V
CC
+V
demag
)/V
demag
]
鈥?/div>
f
where f = switching frequency and
V
demag
= demagnetization voltage.
In this device if the GND pin is disconnected, with
V
CC
not exceeding 16V, both channel will switch
off.
Power MOSFETs
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The devices can be used as a
switch from DC to very high frequency.
1/10

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