N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 鈥?FEB 94
VN2222LL
S
G
D
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
= 25擄C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
= 25擄C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
150
1
鹵
40
400
-55 to +150
UNIT
V
mA
A
V
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Breakdown
Voltage
Gate Body Leakage
Zero Gate Voltage Drain
Current (1)
Static Drain Source On
State Voltage (1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
750
3.75
1.50
7.5
100
60
25
5
10
10
MIN.
60
0.6
2.5
100
10
500
MAX.
UNIT
V
V
nA
碌A(chǔ)
碌A(chǔ)
mA
V
V
鈩?/div>
mS
pF
pF
pF
ns
ns
V
DD
鈮?5V,
I
D
=600mA
V
DS
=25 V, V
GS
=0V
f=1MHz
CONDITIONS.
I
D
=100碌A(chǔ), V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=鹵 30V, V
DS
=0V
V
DS
=48 V, V
GS
=0V
=48 V, V
GS
=0V, T=125擄C
VDS
V
DS
=10 V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
GS
=5V, I
D
=200mA
V
GS
=10V,I
D
=500mA
V
DS
=10V,I
D
=500mA
On State Drain Current(1) I
D(on)
V
DS(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
(on)
t
(off)
(1) Measured under pulsed conditions. Width=300碌s. Duty cycle
鈮?%,
(2) Sample test.
(3) Switching times measured with 50鈩?source impedance and <5ns rise time on a pulse generator
3-91
1
