VN10KC
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
60
r
DS(on)
Max (W)
5 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 2.5
I
D
(A)
0.31
FEATURES
D
D
D
D
D
Zener Diode Input Protected
Low On-Resistance: 3
W
Ultralow Threshold: 1.2 V
Low Input Capacitance: 38 pF
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Extra ESD Protection
Low Offset Voltage
Low-Voltage Operation
High-Speed, Easily Driven
Low Error Voltage
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
D
Inductive Load Drivers
SC-59
G
1
3
D
Marking Code: F1wll
F1 = Part Number Code for VN10KC
w
= Week Code
ll
= Lot Traceability
S
2
Top View
VN10KC
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70967
S-04279鈥擱ev. C, 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limits
60
15/鈥?.3
0.31
0.20
0.6
0.6
0.24
208
鈥?5 to 150
Unit
V
A
W
_C/W
_C
11-1
1
2
3
4
