鈮?/div>
50
碌s)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
D
T
J
, T
stg
Value
60
60
鹵
20
鹵
40
190
1000
400
3.2
鈥?5 to +150
mW
mW/擄C
擄C
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
VN0610LL
1
2
3
CASE 29鈥?1, STYLE 22
TO鈥?2 (TO鈥?26AA)
3 DRAIN
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16鈥?from case for 10 seconds
Symbol
R
胃JA
T
L
Max
312.5
300
Unit
擄C/W
擄C
1 SOURCE
Symbol
Min
Max
Unit
2
GATE
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(V
GS
= 0, I
D
= 100
碌A(chǔ))
Zero Gate Voltage Drain Current
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125擄C)
Gate鈥揃ody Leakage Current, Forward
(V
GSF
= 30 V, V
DS
= 0)
V
(BR)DSS
I
DSS
鈥?/div>
鈥?/div>
I
GSSF
鈥?/div>
10
500
鈥?00
nAdc
60
鈥?/div>
Vdc
碌A(chǔ)dc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0 mA)
Static Drain鈥揝ource On鈥揜esistance
(V
GS
= 10 V, I
D
= 500 mA)
(V
GS
= 10 V, I
D
= 500 mA, T
C
= 125擄C)
Drain鈥揝ource On鈥揤oltage
(V
GS
= 5.0 V, I
D
= 200 mA)
(V
GS
= 10 V, I
D
= 500 mA)
On鈥揝tate Drain Current (V
GS
= 10 V, V
DS
鈮?/div>
2.0 V
DS(on)
)
Forward Transconductance (V
DS
鈮?/div>
2.0 V
DS(on)
, I
D
= 500 mA)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
V
GS(th)
r
DS(on)
鈥?/div>
鈥?/div>
V
DS(on)
鈥?/div>
鈥?/div>
I
D(on)
g
fs
750
100
1.5
2.5
鈥?/div>
鈥?/div>
mAdc
碌mhos
5.0
9.0
Vdc
0.8
2.5
Vdc
鈩?/div>
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
VN0610LL/D
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