= 3.8 m鈩?/div>
D
S
D
G
KS
G
KS
S
Preliminary Data
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D80
I
F25
I
F80
T
C
= 25擄C
T
C
= 80擄C
(diode) T
C
= 25擄C
(diode) T
C
= 80擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
200
鹵20
580
430
580
430
V
V
A
A
A
A
Features
鈥?HiPerFET
TM
technology
- low R
DSon
- dv/dt ruggedness
- fast intrinsic reverse diode
鈥?package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
3.2
2
3
1
2750
500
1350
210
500
900
350
0.9
300
0.07
1.1
3.8 m鈩?/div>
4
2.6
V
mA
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
V
ns
0.05 K/W
K/W
Applications
鈥?converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJS
V
GS
= 10 V; I
D
= I
D80
V
DS
= 20 V; I
D
= 50 mA
V
DS
= 0.8 鈥?V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
; I
D
= I
D80
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
;
I
D
= I
D80
; R
G
= 1
鈩?/div>
(diode) I
F
= 300 A; V
GS
= 0 V
(diode) I
F
= 300 A; -di/dt = 500 A/碌s; V
DS
= 錕?frac12; V
DSS
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2000 IXYS All rights reserved
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