HiPerFET
TM
MOSFET Module
N-Channel Enhancement Mode
VMO 550-01F
V
DSS
= 100 V
= 590 A
I
D25
R
DS(on)
= 2.1 mW
D
G
E 72873
G
S
S
D
KS
Preliminary Data
KS
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D80
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 10 kW
Continuous
Transient
T
S
= 25擄C
T
S
= 80擄C
T
S
= 25擄C
T
C
= 25擄C
T
S
= 25擄C
pulse width limited by T
JM
Maximum Ratings
100
100
鹵20
鹵30
590
440
2360
2200
1470
-40 ...+150
150
-40 ... +125
V
V
V
V
A
A
A
W
W
擄C
擄C
擄C
V~
q
q
q
D = Drain
S = Source
KS = Kelvin Source G = Gate
Features
q
q
50/60 Hz
I
ISOL
攏
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M6)
Terminal connection torque (M5)
typical including screws
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
250
g
q
International standard package
Direct Copper Bonded
Al
2
O
3
ceramic
base plate
Isolation voltage 3600 V~
Low R
DS(on)
HDMOS
TM
process
Low package inductance for high
speed switching
Kelvin Source contact for easy drive
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ. max.
100
3
6
V
V
q
q
q
q
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 6 mA
V
DS
= 20 V, I
D
= 110 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
T
J
= 25擄C
T
J
= 125擄C
AC motor speed control for electric
vehicles
DC servo and robot drives
Switched-mode and resonant-mode
power supplies
DC choppers
鹵500
nA
3 mA
12 mA
2.1 mW
Advantages
q
q
q
q
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
Easy to mount
Space and weight savings
High power density
Low losses
750
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2000 IXYS All rights reserved
1-2
1
2
