= 10 k鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 80擄C
T
C
= 25擄C, t
p
= 10 碌s, pulse width limited by T
JM
T
C
= 25擄C
Maximum Ratings
200
200
鹵20
鹵30
84
63
335
370
-40 ... +150
150
-40 ... +125
V
V
V
V
A
A
A
W
擄C
擄C
擄C
V~
V~
Features
鈥?Two MOSFET's in phaseleg config.
鈥?International standard package
鈥?Direct copper bonded Al
2
O
3
ceramic
base plate
鈥?Isolation voltage 3600 V~
鈥?Low R
DS(on)
HDMOS
TM
process
鈥?Low package inductance for high
speed switching
鈥?Kelvin source contact
Applications
鈥?Switched-mode and resonant-mode
power supplies
鈥?Uninterruptible power supplies (UPS)
50/60 Hz
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
2.25-2.75/20-25 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
130
g
Advantages
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Easy to mount with two screws
Space and weight savings
High power density
Low losses
Symbol
Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ. max.
200
2
4
V
V
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= V
DSS
,
V
GS
= 0 V, T
J
= 25擄C
V
DS
= 0.8 鈥?V
DSS
, V
GS
= 0 V, T
J
= 125擄C
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
鈮?/div>
300 碌s, duty cycle d
鈮?/div>
2%
500 nA
400 碌A
2 mA
20
25 m鈩?/div>
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
C3 - 18
漏 2000 IXYS All rights reserved
943
VMM85-02F 產(chǎn)品屬性
6
半導體模塊
FET
HiPerFET™
2 個 N 溝道（雙）
標準型
200V
84A
25 毫歐 @ 500mA，10V
4V @ 8mA
450nC @ 10V
15000pF @ 25V
370W
底座安裝
Y4
Y4
散裝
1
2
3
4
