鈶?/div>
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
100
鹵20
680
500
680
500
V
V
A
A
A
A
Features
鈥?HiPerFET
TM
technology
鈥?low R
DSon
鈥?unclamped inductive switching (UIS)
capability
鈥?dv/dt ruggedness
鈥?fast intrinsic reverse diode
鈥?low gate charge
鈥?thermistor
for internal temperature measurement
鈥?package
鈥?low inductive current path
鈥?screw connection to high current
main terminals
鈥?use of non interchangeable
connectors for auxiliary terminals
possible
鈥?Kelvin source terminals for easy drive
鈥?isolated DCB ceramic base plate
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
1.8
2
1.5
1
1440
200
680
150
250
400
200
1.2
300
0.12
1.5
2.2 m鈩?/div>
4
1
V
mA
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
V
ns
0.08 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
V
GS
= 10 V; I
D
= I
D80
V
DS
= 20 V; I
D
= 30 mA
V
DS
= 0.8 鈥?V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 75 V; I
D
= I
D80
Applications
鈥?converters with high power density for
鈥?main and auxiliary AC drives of
electric vehicles
鈥?4 quadrant DC drives
鈥?power supplies
V
GS
= 10 V; V
DS
= 0.5 鈥?V
DSS
;
I
D
= I
D80
; R
G
= 0.47
鈩?/div>
(diode) I
F
= 650 A; V
GS
= 0 V
(diode) I
F
= 650 A; -di/dt = 500 A/碌s; V
DS
= 錕?frac12; V
DSS
R
thJC
R
thJS
with heat transfer paste
鈶?/div>
additional current limitation by external leads
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
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