Advanced Technical Information
Dual Power
HiPerFET
TM
Module
= 300 V
VMM 300-03F V
DSS
I
D25
= 290 A
R
DS(on)
typ.
= 7.4 mW
3
8
9
1
Phaseleg Configuration
High dv/dt, Low t
rr
, HDMOS
TM
Family
3
2
1
11
10
9
11
10
8
2
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D80
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 10 kW
Continuous
Transient
T
C
= 25擄C
T
C
= 80擄C
T
C
= 25擄C; t
p
= 10 碌s
T
C
= 25擄C
聛
Maximum Ratings
300
300
鹵20
鹵30
290
220
1160
1500
-40 ...+150
150
-40 ... +125
V
V
V
V
A
A
A
W
擄C
擄C
擄C
V~
Features
q
q
q
q
q
Low R
DS(on)
HDMOS
TM
process
International standard package
Low package inductance for high
speed switching
Kelvin Source contact for easy drive
Direct Copper Bonded
Al
2
O
3
ceramic
base plate
Applications
q
50/60 Hz
I
ISOL
攏
1 mA
t = 1 min
t=1s
3000
3600
q
q
Mounting torque (M6)
Terminal connection torque (M5)
typical including screws
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
250
g
q
AC motor speed control for electric
vehicles
DC servo and robot drives
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
q
q
Symbol
Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ. max.
300
2
4
V
V
q
q
Easy to mount
Space and weight savings
High power density
Low losses
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 12 mA
V
DS
= 20 V, I
D
= 30 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25擄C
T
J
= 125擄C
鹵500
nA
0.5 mA
8 mA
7.4
8.6 mW
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
聛
Additional current limitation by external leads
IXYS reserves the right to change limits, test conditions and dimensions.
031
漏 2000 IXYS All rights reserved
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