鈶?/div>
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
75
鹵20
1500
1200
1500
1100
V
V
A
A
A
A
Features
鈥?Trench MOSFETs
鈥?low R
DSon
鈥?optimized intrinsic reverse diode
鈥?package
鈥?low inductive current path
鈥?screw connection to high current
main terminals
鈥?use of non interchangeable
connectors for auxiliary terminals
possible
鈥?Kelvin source terminals for easy drive
鈥?isolated DCB ceramic base plate
Applications
鈥?converters with high power density for
鈥?main and auxiliary AC drives of
electric vehicles
鈥?4 quadrant DC drives
鈥?power supplies with low input voltage,
e.g. from fuel cells or solar cells
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
0.55
2
1.5
1.5
2480
330
940
60
170
320
200
1.2
90
0.12
1.6
0.8 m鈩?/div>
4
0.15
V
mA
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
V
ns
0.06 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
V
GS
= 10 V; I
D
= I
D80
V
DS
= 20 V; I
D
= 10 mA
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 60 V; I
D
= 500 A
V
GS
= 10 V; V
DS
= 30 V;
I
D
= 250 A; R
G
= 1
鈩?/div>
(diode) I
F
= 750 A; V
GS
= 0 V
(diode) I
F
= 200 A; -di/dt = 1000 A/碌s; V
DS
= 30 V
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2003 IXYS All rights reserved
1-2
315
R
thJC
R
thJS
with heat transfer paste
鈶?/div>
additional current limitation by external leads
1
2
