Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
VMK 90-02T2
V
DSS
= 200 V
= 83 A
I
D25
R
DS(on)
= 25 mW
4 5
1
2
3
6 7
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D80
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 6.8 kW
Continuous
Transient
T
C
= 25擄C
T
C
= 80擄C
T
C
= 25擄C, t
p
= 10
ms,
pulse width limited by T
JM
T
C
= 25擄C, T
J
= 150擄C,
Maximum Ratings
200
200
鹵20
鹵30
83
62
330
380
-40 ... +150
150
-40 ... +125
V
V
V
V
A
A
A
W
擄C
擄C
擄C
V~
V~
TO-240 AA
E 72873
1
2
3
6
7
4
5
1, 3 = Drain,
5, 6 = Gate,
2 = Common Source
4, 7 = Kelvin Source
Features
q
q
50/60 Hz
I
ISOL
攏
1 mA
t = 1 min
t=1s
2500
3000
q
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
q
q
q
q
q
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
ceramic
base plate
Isolation voltage 3000 V~
Low R
DS(on)
HDMOS
TM
process
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ. max.
200
2
4
V
Applications
q
q
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 3 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
, V
GS
= 0 V, T
J
= 25擄C
V
GS
= 0 V, T
J
= 125擄C
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
q
V
q
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
500 nA
400
mA
2 mA
25 mW
Advantages
q
q
q
q
Easy to mount with two screws
Space and weight savings
High power density
Low losses
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
漏 2000 IXYS All rights reserved
1-4
750
1
2
3
4
