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Advanced Technical Information

Dual Power

MOSFET Module

Common-Source connected

N-Channel Enhancement Mode

VMK 165-007T

V

DSS

= 70 V

I

D25

= 165 A

R

DS(on)

= 7 mW

4 5

1

2

3

6 7

Symbol

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

D

I

DM

P

tot

T

J

T

JM

T

stg

V

ISOL

M

d

Weight

Conditions

T

J

= 25擄C to 150擄C

T

J

= 25擄C to 150擄C; R

GS

= 6.8 kW

Continuous

Transient

Maximum Ratings

70

鹵20

鹵30

165

104

660

390

-40 ... +150

150

-40 ... +125

V

A

W

擄C

V~

TO-240 AA

E 72873

1

2

3

6

7

4

5

T

C

= 25擄C

T

C

= 100擄C

T

C

= 25擄C, t

p

= 10 碌s, pulse width limited by T

JM

T

C

= 25擄C, T

J

= 150擄C

1, 3 = Drain,

5, 6 = Gate,

2 = Common Source

4, 7 = Kelvin Source

50/60 Hz

I

ISOL

攏

1 mA

t = 1 min

t=1s

3000

3600

Features

鈥?/div>

Mounting torque(M5 or 10-32 UNF)

Terminal connection torque (M5)

Typical including screws

2.5-4.0/22-35 Nm/lb.in.

90

g

鈥?/div>

Symbol

Conditions

Characteristic Values

(T

J

= 25擄C, unless otherwise specified)

min.

typ. max.

70

2

4

V

鈥?/div>

Two MOSFET with common source

International standard package

JEDEC TO-240 AA

Direct copper bonded Al

2

O

3

ceramic

base plate

Isolation voltage 3000 V~

Low R

DS(on)

HDMOS

TM

process

Low package inductance for high

speed switching

Kelvin source contact

Keyed twin plugs

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

V

GS

= 0 V, I

D

= 1 mA

V

DS

= V

GS

, I

D

= 8 mA

V

GS

=

鹵20

V DC, V

DS

= 0

V

DS

= V

DSS

,

V

GS

= 0 V, T

J

= 25擄C

V

DS

= 0.8 鈥?V

DSS

, V

GS

= 0 V, T

J

= 125擄C

V

GS

= 10 V, I

D

= 0.5 鈥?I

D25

Pulse test, t

攏

300 碌s, duty cycle d

攏

2 %

Applications

鈥?/div>

500 nA

200 碌A(chǔ)

1 mA

6

7 mW

鈥?/div>

Push-pull inverters

Switched-mode and resonant-mode

power supplies

Uninterruptible power supplies (UPS)

AC static switches

Data per MOSFET unless otherwise stated.

Advantages

鈥?/div>

Easy to mount with two screws

Space and weight savings

High power density

Low losses

1-2

023

標(biāo)準(zhǔn)包裝
6
類(lèi)別
半導(dǎo)體模塊
家庭
FET
系列
-
FET 型
2 個(gè) N 溝道（雙）
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
70V
電流 - 連續(xù)漏極(Id) @ 25° C
165A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
7 毫歐 @ 82.5A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 8mA
閘電荷(Qg) @ Vgs
480nC @ 10V
輸入電容 (Ciss) @ Vds
8.8nF @ 25V
功率 - 最大
390W
安裝類(lèi)型
底座安裝
封裝/外殼
TO-240AA
供應(yīng)商設(shè)備封裝
TO-240AA
包裝
散裝

VMK165-007T相關(guān)型號(hào)PDF文件下載

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描述

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VMK165-007...

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Dual Power MOSFET Module

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VMK165-007...

英文版

Dual Power MOSFET Module

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VMK165-007T

VMK165-007T Datasheet

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VMK165-007T Datasheet

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VMK165-007T相關(guān)型號(hào)PDF文件下載

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