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VKM 60-01P1

HiPerFET

TM

Power MOSFET

H-Bridge Topology in ECO-PAC 2

N-Channel Enhancement Mode

High dv/dt, Low t

rr

, HDMOS

TM

Family

K 12

NTC

I

D25

= 75 A

V

DSS

= 100 V

R

DSon

= 25 m鈩?/div>

鈩?/div>

t

rr

L4

L6

A1

L9

P 18

R 18

K 13

X 15

T 18

V 18

X 18

E10

F10

K10

Pin arangement see outlines

< 200 ns

Preliminary data sheet

MOSFETs

Symbol

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt

P

D

Symbol

Test Conditions

T

J

= 25擄C to 150擄C

T

J

= 25擄C to 150擄C; R

GS

= 1 M鈩?/div>

Continuous

Transient

T

C

= 25擄C

T

C

= 25擄C, pulse width limited by T

JM

T

C

= 25擄C

T

C

= 25擄C

I

S

鈮?/div>

I

DM

, di/dt

鈮?/div>

100 A/碌s, V

DD

鈮?/div>

V

DSS

,

T

J

鈮?/div>

150擄C, R

G

= 2

鈩?/div>

T

C

= 25擄C

Test Conditions

Maximum Ratings

100

鹵20

鹵30

75

300

75

30

5

300

V

A

mJ

V/ns

W

Features

鈥?HiPerFET

TM

technology

- low R

DSon

- low gate charge for high frequency

operation

- unclamped inductive switching (UIS)

capability

- dv/dt ruggedness

- fast intrinsic reverse diode

鈥?ECO-PAC 2 package

- isolated back surface

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- solderable pins for PCB mounting

Characteristic Values

(T

J

= 25擄C, unless otherwise specified)

min. typ. max.

100

2.0

4

鹵100

250

1

0.020

25

30

4500

1600

800

20

60

80

60

180

36

85

0.25

30

110

90

260

70

160

0.5

V

nA

碌A(chǔ)

mA

鈩?/div>

S

pF

ns

nC

Applications

鈥?/div>

drives and power supplies

battery or fuel cell powered

automotive, industrial vehicle etc.

secondary side of mains power

supplies

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g(on)

Q

gs

Q

gd

R

thJC

R

thCK

V

GS

= 0 V, I

D

= 250 碌A(chǔ)

V

DS

= V

GS

, I

D

= 4 mA

V

GS

= 鹵20 V

DC

, V

DS

= 0

V

DS

= 0.8 鈥?V

DSS

; T

J

= 25擄C

V

GS

= 0 V;

T

J

= 125擄C

V

GS

= 10 V, I

D

= 0.5 I

D25

Pulse test, t < 300 碌s, duty cycle d < 2%

V

DS

= 10 V; I

D

= I

D25

, pulse test

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz

V

GS

= 10 V, V

DS

= 0.5 鈥?V

DSS

, I

D

= 0.5 I

D25

R

G

= 2

鈩?

(External)

V

GS

= 10 V, V

DS

= 0.5 鈥?V

DSS

, I

D

= 0.5 I

D25

with heatsink compound (0.42 K/m.K; 50 碌m)

1-4

238

K/W

IXYS reserves the right to change limits,

test conditions and dimensions.

標(biāo)準(zhǔn)包裝
25
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
HiPerFET™
FET 型
4 N 通道（半橋）
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
100V
電流 - 連續(xù)漏極(Id) @ 25° C
75A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
25 毫歐 @ 500mA，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 4mA
閘電荷(Qg) @ Vgs
260nC @ 10V
輸入電容 (Ciss) @ Vds
4500pF @ 25V
功率 - 最大
300W
安裝類型
通孔
封裝/外殼
ECO-PAC2
供應(yīng)商設(shè)備封裝
ECO-PAC2
包裝
散裝

VKM60-01P1相關(guān)型號(hào)PDF文件下載

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版本

描述

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下載
VKM60-01P1

英文版

HiPerFET-TM Power MOSFET H-Bridge Topology in ECO-PAC 2

VKM60-01P1
VKM60-01P1

英文版

HiPerFET-TM Power MOSFET H-Bridge Topology in ECO-PAC 2

IXYS [IXYS...

VKM60-01P1

VKM60-01P1 Datasheet

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VKM60-01P1 Datasheet

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