VDI 50-12P1 VII 50-12P1
VID 50-12P1 VIO 50-12P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
JK
I
C25
= 49 A
= 1200 V
V
CES
V
CE(sat) typ.
= 3.1 V
VII
OP9
VID
IK10
VDI
AC1
L9
X13
E2
A
S
LN
GH10
SV18
X15
L9
NTC
X15
T16
NTC
NTC
L9
X15
F1
X16
PS18
B3
Pin arangement see outlines
K10
VX18
X16
IK10
X16
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25擄C
T
C
= 80擄C
V
GE
= 鹵15 V; R
G
= 47
鈩?
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
V
CE
= V
CES
; V
GE
= 鹵15 V; R
G
= 47
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Conditions
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵 20
49
33
50
V
CES
10
208
碌s
W
V
V
A
A
A
Features
鈥?NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
鈥?FRED diodes
- fast reverse recovery
- low forward voltage
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
鈥?space and weight savings
鈥?reduced protection circuits
鈥?leads with expansion bend for stress relief
Typical Applications
鈥?AC and DC motor control
鈥?AC servo and robot drives
鈥?power supplies
鈥?welding inverters
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
3.1
3.5
4.5
3.7
6.5
1.1
4.2
180
100
70
500
70
4.6
3.4
1.65
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 47
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 碌m)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2003 IXYS All rights reserved
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