VID 160-12P1
VIO 160-12P1 VDI 160-12P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK
I
C25
= 169 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.9 V
VID
IK10
VDI
AC1
X15
SV18
L9
NTC
T16
PS18
A
S
LMN
L9
X15
NTC
AC1
X16
B3
Pin arangement see outlines
IK10
F1
X16
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25擄C
T
C
= 80擄C
V
GE
= 鹵15 V; R
G
= 6.8
鈩?
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
V
CE
= V
CES
; V
GE
= 鹵15 V; R
G
= 6.8
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Conditions
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵 20
169
117
200
V
CES
10
694
V
V
A
A
A
碌s
W
Features
鈥?NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
鈥?FRED diodes
- fast reverse recovery
- low forward voltage
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
鈥?space and weight savings
鈥?reduced protection circuits
鈥?leads with expansion bend for stress relief
Typical Applications
鈥?AC and DC motor control
鈥?AC servo and robot drives
鈥?power supplies
鈥?welding inverters
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.9
3.3
4.5
3.5
6.5
6
19
400
100
60
600
90
16.1
14.6
6.5
0.36
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.18 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 160 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 4 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 100 A
V
GE
= 15/0 V; R
G
= 6.8
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 碌m)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2003 IXYS All rights reserved
1-4
303
1
2
3
4
