鈼?/div>
ECO-PAC 2 with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
鈼?/div>
鈼?/div>
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
70 m鈩?/div>
3.5
60
5.5
V
Applications
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 3 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
220
55
125
30
95
100
10
0.9
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
25 碌A(chǔ)
碌A(chǔ)
100 nA
nC
nC
nC
ns
ns
ns
ns
1.1
V
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 25 A; R
G
= 1.8
鈩?/div>
(reverse conduction) I
F
= 20 A; V
GS
= 0 V
per MOSFET
0.45 K/W
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
1)
CoolMOS is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2002 IXYS All rights reserved
1-2
238
VHM40-06P1 產(chǎn)品屬性
25
半導(dǎo)體模塊
FET
-
2 個(gè) N 溝道（雙）
標(biāo)準(zhǔn)型
600V
38A
70 毫歐 @ 25A，10V
5.5V @ 3mA
220nC @ 10V
-
-
底座安裝
ECO-PAC2
ECO-PAC2
盒
VHM40-06P1相關(guān)型號(hào)PDF文件下載
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描述
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英文版
CoolMOS Power MOSFET
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英文版
CoolMOS Power MOSFET
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