Bi-CMOS IC銇拷½錕界敤銇倛銈婏拷½錕芥秷璨婚浕嫻併€?/div>
錕?frac12;錕姐儙銈ゃ偤鐗規(guī)€с倰瀹熺従
錛?128 dBc/Hz Typ. at 100 Hz offset錛?/div>
鈼?/div>
闆繪簮闆誨湩2.8 V瀵懼繙
鈼?/div>
鍘?瀵?澶?/div>
鈻犱粫鈥冩錛堢壒鎬э級
闋呪€冣€冣€冣€冣€冪洰
鍑?/div>
鍔?/div>
鍛?/div>
娉?/div>
鏁?/div>
璦樷€冨彿
f
0
浠曗€冣€冣€冣€冣€冣€冣€冣€冩
13.0000 MHz
-0.3 V鈭?7.0 V
2.8 V鹵0.1 V
-40
藲C鈭?85 藲C
-20
藲C鈭?75 藲C
鹵12
脳
10
-6
Max.
鈥?/div>
鹵12
脳
10
-6
Min.
姝ｆサ鎬?/div>
Z
IN
I
CC
Duty
V
OUT
R
L
鍑衡€冨姏鈥冭矤鈥冭嵎
C
L
10 M惟 Min.
1.0 mA Max.
30 %鈭?0 %
0.8 V Min.
9 k惟鈭?1 k惟
9 pF鈭?1 pF
V
C
-GND (DC)
10
k惟//10 pF, V
CC
=2.8 V
GND Level (DC cut)
Peak to Peak
DC cut capacitor =0.01
碌F
V
C
=1.0 V(center), 0.06 V, 2.0 V
鍗樺搧銇с伄淇濆瓨
鏉♀€冣€冣€冣€冣€冣€冣€冧歡
闆繪簮闆誨湩
鏈€ 澶?渚?緄?闆?鍦?V
CC
-GND
鍕曗€冿拷½錕解€冮浕鈥冨湩
淇濃€冨瓨鈥冩俯鈥冨害
鍕曗€冿拷½錕解€冩俯鈥冨害
V
CC
T
STG
T
OPR
鈥僨/f
0
鈥僨c
娓╁害綃勫洸
鍛?娉?鏁?瀹?瀹?搴?/div>
鍛ㄦ嘗鏁板彲澶夌瘎鍥?/div>
鍛ㄦ嘗鏁板鍖栨サ鎬?/div>
鍏モ€冨姏鈥冩姷鈥冩姉
娑堚€冭不鈥冮浕鈥冩祦
銉?銉?銉?銉?銈?/div>
鍑衡€冨姏鈥冮浕鈥冨湩
涓婅浠ュ銇粫妲樸伀銇ゃ亜銇︺伅銆併亰鍟忋亜鍚堛倧銇涖亸銇犮仌銇勩€?/div>
鈥誨懆娉㈡暟鍒濇湡鍋忓樊銆併儶銉曘儹銉肩壒鎬с€佸懆娉㈡暟娓╁害鐗規(guī)€с€侀浕婧愰浕鍦у鍕曠壒鎬с€佽矤鑽峰鍕曠壒鎬с€佸懆娉㈡暟緄屾檪澶夊寲錛坒a錛氬垵騫村害錛夈倰鍚個銆?/div>
鈻犲錕?frac12;錕藉娉曞洺
#3
3.2鹵0.2
錛堝崢錕?frac12;錕斤細mm錛?鈻犳帹濂ㄣ伅銈撱仩浠樸亼銉戙偪銉箋兂鍥?/div>
1.1 #4
0.8
1.3
錛堝崢錕?frac12;錕斤細mm錛?/div>
A191 A
5.0鹵0.2
1.4
E
13.000
#2
3.7
#1
NO.
1.5 Max.
1鈥?/div>
2
銉斻兂绔瓙
V
C
GND
2.4
3.9
3鈥冣€?OUT
4鈥冣€冣€僔
CC
鈥繪枩綬氱瘎鍥層伀銇€丟ND浠ュ銇儜銈褲兗銉熾倰閰嶇窔銇椼仾銇勩仹銇忋仩銇曘亜銆?/div>
鈥誨洺銇ㄧ暟銇倠銇倱銇犱粯銇戙儜銈褲兗銉熾亴蹇呰銇ㄣ仾銈嬪牬鍚堛伅銇婂晱銇勫悎銇涖亸銇犮仌銇勩€?/div>
1.0
64
VG-2820CB相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Crystal oscillator
EPSONTOYOCOM
-
英文版
Crystal oscillator
EPSONTOYOCOM&nb...
1
