VFT45-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
VFT80-28
is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
.112 x 45擄
A
FEATURES:
B
鈥?/div>
P
G
= 10 dB Typical at 175 MHz
鈥?/div>
30:1 Load VSWR
Capability
鈥?/div>
Omnigold鈩?/div>
Metalization System
F
S
G
C
D
E
D
S
脴.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
D
V
(BR)DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
胃
JC
O
I
GH
7.0 A
60 V
60 V
鹵
20 V
100 W @ T
C
= 25 C
-65 C to +200 C
-65
O
C to +150
O
C
1.8
O
C/W
O
O
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10704
NONE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
畏
D
蠄
T
C
= 25
O
C
TEST CONDITIONS
I
D
= 100 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 25 mA
I
D
= 1 A
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
MINIMUM
60
TYPICAL MAXIMUM
5.0
1.0
UNITS
V
mA
碌
A
V
mS
1.0
700
52
87
8
12
50
15
60
6.0
V
DS
= 28 V
V
DD
= 28 V
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 45 W
F = 175 MHz
pF
dB
%
V
SWR
= 30:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
VFT45-28相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
VHF POWER MOSFET N-Channel Enhancement Mode
ASI
-
英文版
VHF POWER MOSFET N-Channel Enhancement Mode
ASI [Advan...
-
英文版
Diode Schottky 45V 40A (DC) Through Hole ITO-220AC