VFT150-50
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
VFT150-50
is a N-Channel
Enhancement Mode RF Power
MOSFET Designed for AM/FM Power
Amplifier Applications up to 175 MHz.
PACKAGE STYLE .500 4L FLG
.112x45擄
A
FULL R
L
FEATURES:
鈥?/div>
P
G
= 13.5 dB Typical at 175 MHz
鈥?/div>
10:1 Load VSWR
Capability
鈥?/div>
Omnigold鈩?/div>
Metalization System
S
D
脴.125 NOM.
C
B
G
E
H
D
G
F
S
I J
K
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
胃
JC
O
O
16 A
125 V
鹵
30 V
300 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.6
O
C/W
O
O
O
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10709
NONE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
畏
D
蠄
I
D
= 50 mA
V
DS
= 50 V
V
DS
= 0 V
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 50 V
T
C
= 25
O
C
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 20 V
I
D
= 100 mA
I
D
= 5 A
V
GS
= 0 V
f = 1.0 MHz
f = 175 MHz
MINIMUM
125
TYPICAL MAXIMUM UNITS
5.0
1.0
5.0
V
mA
碌
A
V
mS
1.0
3,000
290
130
28
13
45
13.5
55
pF
dB
%
V
DD
= 50 V
I
DQ
= 250 mA
P
out
= 150 W
V
SWR
= 10:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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